Development of AZO TCOs with ALD for HEMT and HJSC Solar Cell Applications

Transparent Conductive Oxide (TCO) films are widely used in optoelectronic devices, such as solar cells, LEDs, and Lasers. Utilization of these contacts directly affects the device efficiencies. Purpose this study is to produce optimize properties Aluminum doped Zinc (AZO) using a vapor phase technique, Atomic Layer Deposition (ALD) for (n+) a-Si:H surface silicon Heterojunction Solar Cells (HJSCs) High Electron Mobility Transistor (HEMT) applications. This focused on effect deposition temperature aluminum atomic concentration structural, electrical optical ALD grown AZO ohmic contact films. The results show that as-deposited have 80-90% transmittance visible spectra, low resistance (2.04x10-3 ohm.cm) mobility value 5.25 cm2/V.s.